| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to effectively control penetration of a cleaning solution into a storage node electrode in a cleaning process by increasing a columnar boundary length. A cap oxide layer is formed on the front surface of a semiconductor substrate(10) having a storage node contact(12). The cap oxide layer is etched to form a hole to which the storage node contact is exposed. A barrier metal layer(16) is formed on the exposed storage node contact. A metal layer is repeatedly deposited and annealed on the surface of the hole including the barrier metal layer in the same chamber to form a storage node electrode(17) of a multilayered structure. A dielectric layer(18) and a plate electrode(19) are sequentially formed on the storage node electrode.
|
