| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing the total number of processes and reducing a cost, and a manufacturing method of the same. <P>SOLUTION: A semiconductor memory device 10 comprises a semiconductor substrate 13, a first impurity region 17, a second impurity region 15, a channel region 75 formed between the first impurity region 17 and the second impurity region 15, a first gate 42 formed on the main surface of the first impurity region 17 side of the main surface of the semiconductor substrate 13 where the channel region 75 is located, a second gate 45 formed on the main surface of the second impurity region side 15 of the main surface of the semiconductor substrate 13 where the channel region 75 is located through a second insulating film 44, a third insulating film 46 located on the main surface of the semiconductor substrate located on the opposite side of the second gate 42 with respect to the first gate 45 and formed on the side face of the first gate 42. An interface between the third insulating film 46 and the semiconductor substrate 13 located directly thereunder is located upward of the interface between the second insulating film 44 and the main surface of the semiconductor substrate located directly thereunder. <P>COPYRIGHT: (C)2007,JPO&INPIT |
