| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To ease an electric field of a drift part without reducing impurity concentration to realize a semiconductor device having a high breakdown voltage and low on-state resistance. <P>SOLUTION: When applying a rated voltage between a body region and drain region, which are formed on an insulating semiconductor substrate, the thickness of the both regions are specified, so that two drift regions of p-type and n-type sandwiched between the body and drain regions may be completely depleted. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
