| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonlinear element manufacturing method which can perform a patterning finer than resolution of an exposure apparatus used in formation of a resist mask, and which is free from contaminating a film pattern obtained by patterning due to the resist; and to provide an electro-optical device. SOLUTION: When manufacturing a TFD 10, after a mask-forming metal film 18 composed of a chromium film is formed on an upper layer of a tantalum film 13; a resist mask 19 is formed on the upper layer of the mask-forming metal film 18, wet-etching is carried out for the mask-forming metal film 18 in this state, and a patterning mask 18a smaller than the resist mask 19 is formed by side-etching in the etching. Then, dry-etching is carried out for the tantalum film 13 in this state, and a lower electrode 13b is formed. COPYRIGHT: (C)2007,JPO&INPIT |
