| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method of a wafer in which a gettering sink effect is sustained while ensuring flexural strength. SOLUTION: The processing method of the wafer for imparting the gettering sink effect to the wafer having a plurality of devices formed on the surface comprises a step for forming a predetermined amount of a strained layer on the rear surface of the wafer by immersing the rear surface of the wafer into liquid mixed with abrasive grains and contained in a processing tub, and imparting an ultrasonic wave to the liquid mixed with abrasive grains so that the mixed abrasive grains act on the rear surface of the wafer. COPYRIGHT: (C)2007,JPO&INPIT |
