| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, in which reliability of an MIM capacitor is improved. SOLUTION: The semiconductor device has a semiconductor substrate, first wiring formed on the semiconductor substrate via a first insulation film, an MIM capacitor formed on the first insulation film, a second insulation film formed over the MIM capacitor, second wiring formed on the surface of the second insulation film, and a guard ring embedded in the second insulation film so as to surround the MIM capacitor. COPYRIGHT: (C)2007,JPO&INPIT
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