| 摘要 |
PROBLEM TO BE SOLVED: To prevent the lowering of hydrogen barrier property of a film formed on a recess, even when a recess is created on a contact plug. SOLUTION: The method of manufacturing the semiconductor memory device includes:a process to form an interlayer insulating film 106 on a semiconductor substrate 101, a process to form an insulating hydrogen barrier film 107 on the interlayer insulating film 106, the third process to form a contact hole 108, a process to form a plugged film 109 on the insulating hydrogen barrier film 107, so that the inside of the contact hole 108 be embedded, a process to embed a plug 110 into the contact hole 108 by removing the plugged film 109 to become a state, in which a recess 111 is formed, a process to remove the insulating hydrogen barrier film 107 by the depth of the recess 111 to arrange upper surfaces of the plug 110 and the insulating hydrogen barrier film 107 to be flush, and a process to form conductive hydrogen barrier films 112 on the upper surfaces of the plug 110 and insulating hydrogen barrier film 107. COPYRIGHT: (C)2007,JPO&INPIT
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