发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, capable of suppressing or preventing the temperature fluctuations of temperature measuring means, and capable of carrying out a more stable temperature control. SOLUTION: The substrate processing apparatus is equipped with a susceptor 217 installing a wafer 200, a treatment room 201 accommodating the susceptor 217, heating means 207, 223 constituted by plural zones, each of which is independently controlled, a mechanism 267 rotating the susceptor 217, and plural temperature measuring means 261a to 261d for measuring the temperature of the wafer 200. At least two temperature measuring means 261a, 261d from among the temperature measuring means 261a to 261d are placed at a position having point symmetry with respect to the center point of the wafer 200, when the wafer 200 is installed normally on the susceptor 217, and control an output of at least one zone of the heating means 207, 223 based on an operational result of measured temperatures by two temperature measuring means 261a, 261d. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006303289(A) 申请公布日期 2006.11.02
申请号 JP20050124751 申请日期 2005.04.22
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHINOZAKI KENJI
分类号 H01L21/26;C23C16/46;H01L21/205 主分类号 H01L21/26
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