Mask data creation method

摘要

A method of creating data of a mask for manufacturing a semiconductor device. The mask includes at least one auxiliary pattern arranged adjacent to a line pattern. An auxiliary pattern is allocated in accordance with a rule-based method on the basis of an interval between a first line pattern and a second line pattern adjacent to the first line pattern. The size of the auxiliary pattern is then optimized in accordance with a model-based OPC (Optical Proximity Correction).