| 摘要 |
Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties. The thin film transistor includes a substrate; a plurality of semiconductor layers formed on the substrate, the semiconductor layers including grains of different sizes obtained by crystallizing an amorphous silicon layer beneath a capping layer into a polycrystalline silicon layer using the capping layer pattern containing a metal catalyst with a predetermined distribution and having a predetermined height and width; and a gate insulating layer, a gate electrode, an interlayer insulting layer, and source and drain electrodes formed on the semiconductor layers. Therefore, the crystallization process is performed using the capping layer pattern containing the metal catalyst, which has concentration and distribution varying depending on the thickness of the capping layer pattern, thereby improving the size and uniformity of grains. In addition, the polycrystalline silicon of desired size and uniformity is selectively formed in a desired position by one crystallization process, resulting in the thin film transistor having excellent and desired properties.
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