Memory device e.g. dynamic random access memory, has transistor such as recessed transistor and fin transistor, with active area protruding from preset portion of semiconductor substrate, and recess formed in channel area

摘要

The device has a transistor such as a recessed transistor and a fin transistor, with an active area (111a) protruding from a preset portion of a semiconductor substrate (111), and a recess formed in a channel area provided in the active area. A field oxide layer is formed over the substrate, and a gate electrode is extended across an upper portion of the active area and overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area, and source and drain areas are formed in the active area at sides of the gate electrode. An independent claim is also included for a method for fabricating a semiconductor memory device.