METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent SAC(Self Align Contact) fail by forming a plug pad of embossed carving shape on a landing plug contact and by forming a nitride spacer at both sidewalls of the plug pad. A plurality of gate lines are formed on a substrate(21). A landing plug contact(28) is formed between the gate lines. A plug pad(32) with an embossed carving shape is formed on the landing plug contact. A nitride spacer(33) is formed at both sidewalls of the plug pad. An interlayer dielectric is formed on the resultant structure. A contact hole is then formed to expose the plug pad by etching the interlayer dielectric.