| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting stable performance. <P>SOLUTION: The semiconductor device includes a source and/or drain raised structure provided at a predetermined position of a semiconductor substrate sectioned by an oxide film and a gate wire. An orthogonal projection image of the shape of the upper end of the source and/or drain raised structure onto the semiconductor substrate in the normal direction of the substrate approximately coincides with a predetermined form on the semiconductor substrate sectioned by the corresponding oxide film and the gate wire. In addition, at least one of orthogonal projection images on the substrate along the normal direction of a cross section obtained by cutting on a plane parallel to the substrate of the source and/or drain raised structure is larger than the predetermined form on the substrate sectioned by the corresponding oxide film and the gate wire. <P>COPYRIGHT: (C)2007,JPO&INPIT |
