| 发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND CONDUCTIVE COMPOSITION USED IN IT |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new composition and a new method for manufacturing a semiconductor device improved in both of electric performance and solder adhesiveness. <P>SOLUTION: This conductive composition is a thick film conductive composition consisting of conductive silver powder (a), an Mn-containing additive (b), and glass frit (c) with a softening point ranging from 300 to 600°C are dispersed in an organic medium (d). As to the semiconductor device and this manufacturing method for the semiconductor device for forming the semiconductor device from a structure element constructed of a semiconductor having a p-n junction and an insulation film formed on a main surface of the semiconductor, the manufacturing method includes a step (a) for sticking the thick film composition to the insulation film and a step (b) for sintering the semiconductor, the insulation film and the thick film composition for forming an electrode. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
| 申请公布号 |
JP2006302891(A) |
申请公布日期 |
2006.11.02 |
| 申请号 |
JP20060112246 |
申请日期 |
2006.04.14 |
| 申请人 |
E I DU PONT DE NEMOURS & CO |
发明人 |
WANG YUELI L;CARROLL ALAN F;HANG KENNETH W;YOUNG RICHARD JOHN S |
| 分类号 |
H01B1/22;H01L21/28;H01L21/288;H01L31/04 |
主分类号 |
H01B1/22 |
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