| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar organic thin-film field-effect transistor having both p-type and n-type transistor characteristics with the use of a comparatively simple method, and to provide its fabrication method. SOLUTION: In a thin-film field-effect transistor having a metal/insulator/semiconductor (MIS) structure, a semiconductor layer 4 is formed of an organic compound, and an insulator layer 3 is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits the n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage of the organic compound of the insulator layer between source and gate electrodes 5, 2, and the transistor exhibits the p-type transistor characteristics when polling is not conducted. Consequently, the n-type characteristics which is not normally obtained is obtained in the organic field-effect transistor where the semiconductor layer and the insulator layer are formed of the organic compound. Thus, the bipolar organic thin-film field-effect transistor is obtained, which exhibits both the p-type and n-type transistor characteristics. COPYRIGHT: (C)2007,JPO&INPIT
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