发明名称 ION GENERATION DEVICE, ION IMPLANTER AND SEMICONDUCTOR MANUFACTURING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ion generation device with less change of ion-tripping efficiency against erosion of a side surface of an opening part. SOLUTION: A front board 26 with an opening part 30 formed therein is structured by laminating a plurality of board members 35, 36, and the board member 35 of the innermost side projecting further than the other board member 36 has a side surface 40 formed at the opening part 30 nearly parallel to a tripping direction A of ion. Although the side surface 40 is eroded at the time of ion tripping, its shape is nearly parallel to the tripping direction A of the ion even if it is eroded, not changing before and after the erosion. With this, change of efficiency of the ion tripping is suppressed against the erosion of a side surface 33 (containing each of surfaces 40 to 42) of the opening 30. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006302701(A) 申请公布日期 2006.11.02
申请号 JP20050123876 申请日期 2005.04.21
申请人 SHARP CORP 发明人 UEDA TETSUYA;SUGIOKA TAKEMITSU
分类号 H01J27/02;H01J37/08;H01J37/317;H01L21/265 主分类号 H01J27/02
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