发明名称 |
Etching technique for the fabrication of thin (AI, In, Ga)N layers |
摘要 |
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.
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申请公布号 |
US2006246722(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
US20060403288 |
申请日期 |
2006.04.13 |
申请人 |
SPECK JAMES S;HASKELL BENJAMIN A;PATTISON P M;BAKER TROY J |
发明人 |
SPECK JAMES S.;HASKELL BENJAMIN A.;PATTISON P. M.;BAKER TROY J. |
分类号 |
C23F1/00;B44C1/22;H01L21/302 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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