发明名称 Data latch circuit, driving method of the data latch circuit, and display device
摘要 <p>The present invention provides a data latch circuit which can operate stably with a low-amplitude signal, which consumes less electric power, and which is resistant against the variation in TFTs. When an analog switch is turned on, a data signal is inputted to a gate electrode of an n-channel TFT and, at this time, VDD is supplied to an input terminal of an inverter. When the analog switch in turned off, the n-channel TFT is turned on or off depending on a level of the data signa. When the data signal is at an H level, the n-channel TFT is turned on and VSS is supplied to the input terminal of the inverter. When the data signal is at an L level, VDD is supplied to an input terminal of the inverter. Therefore, only VDD and VSS levels are applied to the input terminal of the inverter.</p>
申请公布号 EP1717783(A2) 申请公布日期 2006.11.02
申请号 EP20060007517 申请日期 2006.04.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OSAME, MITSUAKI;UENO, TATSURO
分类号 G09G3/20;G09G3/32 主分类号 G09G3/20
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