发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor display panel, and a manufacturing method thereof are provided to make a gradient of a sidewall of a contact hole gentle by forming a protrusion at a lower portion of the contact hole where a drain electrode and a pixel electrode contact each other, or by remaining part of an upper layer of a data line layer. A gate line and a protrusion(123) are formed on a substrate(210). A gate insulating layer(140) is formed on the gate line and the protrusion. A semiconductor(151,154) is formed on the gate insulating layer. A data line(171) and a drain electrode(175) are formed on the semiconductor at least in part, and include a lower layer and an upper layer. A passivation layer(180) is formed on the data line and the drain electrode, has a contact hole exposing the lower layer of a part of the drain electrode or the data line and having at least one boundary placed on the protrusion. A conductor is connected to the drain electrode or the data line through the contact hole.
申请公布号 KR20060112793(A) 申请公布日期 2006.11.02
申请号 KR20050035414 申请日期 2005.04.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, IN WOO;CHOO, MIN HYUNG;SOHN, WOO SUNG;LEE, KUG SEUNG;YOO, YOUNG HOON
分类号 G02F1/136 主分类号 G02F1/136
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