发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
A thin film transistor display panel, and a manufacturing method thereof are provided to make a gradient of a sidewall of a contact hole gentle by forming a protrusion at a lower portion of the contact hole where a drain electrode and a pixel electrode contact each other, or by remaining part of an upper layer of a data line layer. A gate line and a protrusion(123) are formed on a substrate(210). A gate insulating layer(140) is formed on the gate line and the protrusion. A semiconductor(151,154) is formed on the gate insulating layer. A data line(171) and a drain electrode(175) are formed on the semiconductor at least in part, and include a lower layer and an upper layer. A passivation layer(180) is formed on the data line and the drain electrode, has a contact hole exposing the lower layer of a part of the drain electrode or the data line and having at least one boundary placed on the protrusion. A conductor is connected to the drain electrode or the data line through the contact hole. |
申请公布号 |
KR20060112793(A) |
申请公布日期 |
2006.11.02 |
申请号 |
KR20050035414 |
申请日期 |
2005.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, IN WOO;CHOO, MIN HYUNG;SOHN, WOO SUNG;LEE, KUG SEUNG;YOO, YOUNG HOON |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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