CMOS IMAGE SENSOR, AND METHOD FOR FABRICATING THE SAME

摘要

A CMOS is provided to obtain a high-quality image by improving a light absorption efficiency and quantum efficiency of a photodiode that receives light and converts the received light into current. A silicon substrate(201) of first conductivity type is prepared. A SiGe epitaxial layer(203) is formed on the silicon substrate to increase light sensitivity. A Si epitaxial layer(204) for depositing an oxide layer is formed on the SiGe epitaxial layer. A transistor is formed on the resultant structure. A photodiode impurity region(209) is formed in the SiGe epitaxial layer.