| 摘要 |
831,815. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Feb. 26, 1957 [Feb. 29, 1956], No. 6434/57. Class 37. A method of making a device comprising a semi-conductor body with at least one rectifying electrode and an ohmic electrode includes the steps of etching the body and electrode assembly and then introducing it into an atmosphere containing nitrogen dioxide and dinitrogen tetroxide and preferably also water vapour. In one embodiment an alloy junction transistor, the main body of which is of P-type silicon, is etched and then mounted in a glass envelope contairing nitrogen dioxide and dinitrogen tetroxide into which water vapour is later introduced. The envelope is then partially evacuated, heated to 190‹ C. and cooled. In a further embodiment an N-type germanium alloy transistor is mounted after etching in an envelope containing dry nitrogen dioxide and dinitrogen tetroxide. After introduction of addition of moist nitrogen dioxide and dinitrogen tetroxide the envelope is sealed, heated to 65 C. and finally cooled. |
