| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve precision by shortening TAT with proximity effect correction of a phase shift mask. <P>SOLUTION: An OPC processing flow has steps (S1. S6, S2) to respectively set: line pattern types to conduct shifter setting; a length (Dac-g) of a domain excluded from evaluation set between boundaries of both ends of the shifter and a line pattern; and a length (SS) of a segment dividing a domain to be evaluated except for the domain excluded from evaluation on the boundary between the line pattern and the shifter into equal parts, and a step (S3) to arrange a proximity correction pattern on each segment, and to estimate a pattern width to be finished between the shifters with simulation while changing pattern widths of the proximity correction pattern. Further the simulation (S3) is conducted in repetition by successively changing the line pattern type, the length of the domain excluded from evaluation (SS), and combination of the segment lengths (S9→S1, S2, S8→S6). <P>COPYRIGHT: (C)2007,JPO&INPIT |
