METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor substrate free from cracks and having a reduced defect density and excellent productivity.

SOLUTION: After a mask film 12B having a plurality of openings 12a in a stripe shape and made of a material on which substantially no nitride semiconductor grows is formed on a main surface of a base substrate 11, a semiconductor layer 13 of nitride is selectively grown through the mask film 12B on the base substrate 11. The semiconductor layer 13 grows to extend over the mask film 12B from the openings 12a of the mask film 12B, and a semiconductor layer 13 having a flat surface embedding the mask film 12B is obtained. Then the interface between the semiconductor layer 13 and the base substrate 11 is irradiated with laser light to separate the semiconductor layer 13 from the base substrate 11 to form a nitride semiconductor substrate.

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