发明名称 RFID SYSTEM INCLUDING MEMORY FOR CORRECTING FAIL CELL AND METHOD FOR CORRECTING FAIL CELL USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To improve yield of an RFID system by comparing data of a unit cell for each group and correcting effectively cell data distributed randomly in memories in RFID in a state in which the same data are written in many unit cells belonging to one group. <P>SOLUTION: Such technology is disclosed that a failed cell correcting circuit is included in a memory in the RFID system, and yield of the RFID system is improved by correcting effectively cell data distributed randomly concerning the RFID system including a memory which can correct a failed cell and its failed cell correcting method. Therefore, a predetermined number of unit cells are separated into one memory group, and the same data are stored in each memory group at a write mode, At a read mode, the cell data of the selected memory group are compared, the same data are identified as effective data to improve yield of the RFID system. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006302487(A) 申请公布日期 2006.11.02
申请号 JP20050366356 申请日期 2005.12.20
申请人 HYNIX SEMICONDUCTOR INC 发明人 KANG HEE BOK;AHN JIN HONG
分类号 G11C29/02;G01R31/28;G06K19/07;G11C11/22;G11C29/34 主分类号 G11C29/02
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