发明名称 PROCESSING METHOD FOR INORGANIC OXIDE FILM, SUBSTRATE FOR ELECTRONIC DEVICE, MANUFACTURING METHOD FOR SUBSTRATE FOR ELECTRONIC DEVICE, LIQUID CRYSTAL PANEL, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a processing method for an inorganic oxide film in which alcohol can securely and chemically be bonded to not only a surface of the inorganic oxide film, but also an internal surfaces of pores, a substrate for an electronic device such that, for example, aligning properties of liquid crystal molecules etc., are hard to decrease with time, a manufacturing method for the substrate for the electronic device in which the substrate for the electronic device can be manufactured, and a liquid crystal panel and electronic equipment which are reliable. SOLUTION: The manufacturing method for the substrate for the electronic device includes the stages of: forming the inorganic oxide film having a plurality of pores 30 on one surface side of the substrate 9 by an oblique vapor-deposition method; dipping the substrate 9 where the inorganic oxide film 31 is formed in processing liquid containing at least first alcohol and second alcohol having a smaller molecular weight than the first alcohol; making the processing liquid permeate the pores 30 by reducing the pressure in the space where the processing liquid is installed; and obtaining an alignment film 3A by chemically bonding alcohol in the processing liquid to the surface of the inorganic oxide film 31 and internal surfaces of the pores 30. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006301158(A) 申请公布日期 2006.11.02
申请号 JP20050120770 申请日期 2005.04.19
申请人 SEIKO EPSON CORP 发明人 TERAO KOICHI;SHINOHARA YUJI
分类号 G02F1/1337;C23C14/24 主分类号 G02F1/1337
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