发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, METHOD OF DESIGNING SAME, AND SEMICONDUCTOR MASK
摘要 PROBLEM TO BE SOLVED: To provide a method of designing a semiconductor integrated circuit which allows buffer cells to be disposed in the corner regions of a chip, a semiconductor integrated circuit manufactured by this designing method and a semiconductor mask for manufacturing the semiconductor integrated circuit. SOLUTION: A wiring model is formed with buffer cells 2 disposed in the corner regions 1 of a chip. A wiring layout is formed according to the formed wiring model. Based on the wiring layout, alternative cells (30) are formed between the corner regions 1 and a core region 5 for ensuring wiring regions 4. The alternative cells (30) are disposed as buffer cells to prevent the wiring region 4 from being occupied by other buffer cells 3. The buffer cells 2 are disposed at the corner regions 1. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006303113(A) 申请公布日期 2006.11.02
申请号 JP20050121471 申请日期 2005.04.19
申请人 SHARP CORP 发明人 TSUBAKI NAOYUKI
分类号 H01L21/82;H01L21/822;H01L27/04 主分类号 H01L21/82
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