发明名称 Memory device and semiconductor device
摘要 An object of the present invention is to provide an involatile memory device that is capable of writing and erasing data at a time other than during manufacturing, and a semiconductor device having the memory device. Also, an object of the present invention is to provide a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. The memory device of the present invention has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
申请公布号 US2006246643(A1) 申请公布日期 2006.11.02
申请号 US20060410087 申请日期 2006.04.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHSAWA NOBUHARU
分类号 H01L21/8234 主分类号 H01L21/8234
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