| 摘要 |
<p>A semiconductor power device is provided to obtain a consistent device characteristic by using a PECVD oxide as a passivation layer. A first oxide layer is formed right on a semiconductor region of a first conductivity type by using a PECVD method. A second oxide layer is formed on the first oxide layer by a PECVD method to form a first passivation layer including the first and second oxide layers. First and second field plates(107) are formed on the first passivation layer. A second passivation layer(109) is formed on the first passivation layer. A third passivation layer is formed on the second passivation layer.</p> |
