METHOD FOR FORMING VIA HOLE USING DUAL DAMASCENE PROCESS

摘要

A method for forming a via hole using dual damascene process is provided to reduce the thickness of a photoresist and to remove stably a photoresist pattern by performing photolithography process after coating a BARC(Bottom Anti-Reflective Coating) layer. An insulating layer(21) having a trench is formed on a substrate(20). A BARC layer(23) is coated on the resultant structure. A photoresist layer is coated on the BARC layer. The photoresist layer and the BARC layer are simultaneously etched to expose the insulating layer by exposing and developing. A via hole(26) is then formed by etching the exposed insulating layer using the photoresist pattern(24) and the BARC pattern. The photoresist pattern and the BARC pattern are removed.