发明名称 MATERIAL FOR FORMING PROTECTIVE FILM, AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a material for forming a resist protective film with which deterioration of a resist film during liquid immersion lithography using water or other various liquids for liquid immersion lithography and deterioration of the liquid for liquid immersion lithography itself are simultaneously prevented in a liquid immersion lithography process, and with which durability for storage in an amine-containing atmosphere after exposure and before developmant of the resist film is improved without increasing the number of steps of processing. <P>SOLUTION: The material for forming the protective film is constructed by making the material contain at least water or an alkali soluble polymer component, and alcohol containing a fluorine atom. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006301524(A) 申请公布日期 2006.11.02
申请号 JP20050126703 申请日期 2005.04.25
申请人 TOKYO OHKA KOGYO CO LTD 发明人 ISHIZUKA KEITA;ENDO KOTARO
分类号 G03F7/11;H01L21/027 主分类号 G03F7/11
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