发明名称 Methods of forming patterned photoresist layers over semiconductor substrates
摘要 This invention includes methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a porous antireflective coating is formed over a semiconductor substrate. A photoresist footer-reducing fluid is provided within pores of the porous antireflective coating. A positive photoresist is formed over the porous antireflective coating having the fluid therein. The positive photoresist is patterned and developed to form a patterned photoresist layer, with the fluid within the pores being effective to reduce photoresist footing in the patterned photoresist layer than would otherwise occur in the absence of the fluid within the pores. Other aspects and implementations are contemplated.
申请公布号 US2006246734(A1) 申请公布日期 2006.11.02
申请号 US20060477287 申请日期 2006.06.28
申请人 BLALOCK GUY T;SANDHU GURTEJ S;DALEY JON P 发明人 BLALOCK GUY T.;SANDHU GURTEJ S.;DALEY JON P.
分类号 H01L21/302;G03C5/00;G03F7/09;H01L21/027;H01L21/31;H01L21/469;H01L21/4763;H01L21/768 主分类号 H01L21/302
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