FLASH MEMORY DEVICE CAPABLE OF ERASING FLASH BLOCKS IN SOI SUBSTRATE BASED ON BACK-BIAS, METHOD FOR MANUFACTURING THE SAME, AND FLASH BLOCK ERASION METHOD AND STRUCTURE THEREOF

摘要

Provided is a flash memory, and more particularly, to a method and structure for erasing flash blocks based on back-bias. The method comprises the steps of forming a flash block on a silicon on insulator (SOI) substrate and forming a body-electrode on back side of the silicon on insulator (SOI) substrate.