发明名称 Semiconductor apparatus
摘要 A semiconductor apparatus includes a first transistor having a first emitter electrode, a first base electrode, and a first collector electrode in a region over a first region. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. A writing voltage is reduced in an antifuse using two bipolar transistors.
申请公布号 US2006244103(A1) 申请公布日期 2006.11.02
申请号 US20060411096 申请日期 2006.04.26
申请人 HITACHI, LTD. 发明人 ISHIKAWA KOJI;MORI KAZUTAKA;KOGAYU HIROSHIGE;MIYAKE TAMOTSU;KUSUNOKI MITSUGU
分类号 H01L27/082 主分类号 H01L27/082
代理机构 代理人
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