| 摘要 |
<p>The invention relates to a method of forming an optical compound, consisting of: a) the formation of a multilayer stack (32, 34) comprising an adjustment layer (30) that is made from a metal/semiconductor mixture which is formed in or on the stack; b) the etching of part of the multilayer stack, including at least part of the adjustment layer; and c) an annealing step in order to contract the adjustment layer by less than 1 nm.</p> |
