<p>A slurry for use in chemical mechanical polishing of a metal layer comprising Fe-containing SiO<SUB>2</SUB> metal oxide particles uniformly dispersed in a stable aqueous medium is provided. The Fe-containing SiO2 particles provide a mechanical polishing action during polishing. Additionally Fe-containing SiO<SUB>2</SUB> metal oxide particles provide effects to self-stabilize the SiO<SUB>2</SUB> abrasives in the aqueous dispersion, and also act as a catalyst during the polishing operation. The composition of the CMP slurry is particularly suitable for use in the global planarization of a tungsten film on the device wafer surface.</p>
