METHOD OF MANUFACTURING DOPED Inx AlyGa1-x-yN EPITAXIAL LAYERS, DOPED InxAlyGa1-x-yN EPITAXIAL LAYER AND SEMICONDUCTOR MULTI-LAYER STRUCTURE COMPRISING AT LEAST ONE DOPED InxALyGa1-x-yN EPITAXIAL LAYER, WHERE

摘要

The method is based on the epitaxial deposition of layers with donor or/and acceptor or/and isoelectronic or/and magnetic dopants on crystalline substrates with the threading dislocation (TD) density less than 10⁵cm^-2 and disorientation angle (a) of atomic steps (1) relatively to the crystalline planes from 0.3' to 30°, where the epitaxial growth temperature is lower than the InN metastability temperature, by molecular beam epitaxy with chemically active nitrogen atoms and molecules (Reactive Nitrogen Molecular Beam Epitaxy - RN MBE) . Concentration of the threading dislocations (TD) in the grown layer according to this invention is lower than 10⁵cm^-2 and the concentration of substitutional dopants (like Si, Ge, Te, Mn, Mg, Be, Fe, Er, Ca, C, Cr, Zn) is higher than 10¹⁸cm^-3.