METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING RECESS PROCESS

摘要

A method for fabricating a semiconductor device using a recess gate process is provided to improve the refresh characteristic of a semiconductor device by eliminating a horn type in a recess etch process. A pad oxide layer is formed on a silicon substrate(21) having an isolation region. A mask pattern is formed on the pad oxide layer, opening a gate formation region of the silicon substrate. The gate formation region is etched by using the mask pattern as an etch barrier to form a recess pattern(26) in which the center of the recess pattern has a protrusion type of a round profile and the edge of the recess pattern has a recessed type of a sharp profile. In forming the recess pattern, nitrogen gas having a high flowrate added to main etch gas is used. A gate oxide layer is formed on the resultant structure along the profile of the recess pattern. A gate line whose lower part is buried in the recess pattern is formed on the gate oxide layer.