| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film thickness measuring method measuring precisely and nondestructively a film thickness of a semiconductor integrated circuit pattern transferred and formed on a semiconductor substrate. <P>SOLUTION: This film thickness measuring method has steps of: acquiring a product secondary electronic signal waveform of a product pattern; extracting a plurality of product feature amounts from the product secondary electronic signal waveform; and measuring the film thickness of the product pattern, using a plurality of model functions calculated preliminarily, setting:, as unknowns, the plurality of product feature amounts in a test pattern having a dimension specification same that of the product pattern; and a plurality of exposure conditions therefor. <P>COPYRIGHT: (C)2007,JPO&INPIT |
