| 摘要 |
PROBLEM TO BE SOLVED: To suppress short channel effect even if a high dielectric film is used as a gate insulating film. SOLUTION: A semiconductor device comprises a silicon substrate 101, a gate insulating film 108 formed on the silicon substrate 101, gate electrodes 109 and 110 formed on the gate insulating film 108, and NMISFET and PMISFET being formed from the silicon substrate 101 such that the gate electrodes 109 and 110 are sandwiched and comprising source and drain of silicide 115 and 202. The device satisfies at least one of a condition in which the material of the gate insulating film 108 is a high dielectric film and a condition in which the material of the gate electrode is metal. The materials constituting NMISFET and PMISFET are different. COPYRIGHT: (C)2007,JPO&INPIT
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