| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which silicon of an increased degree of purity is manufactured without increasing labor hour or energy consumption in silicon production by reducing silicon tetrachloride with zinc, and to provide a manufacturing apparatus for the manufacturing method. SOLUTION: In the method for manufacturing high purity silicon, when silicon tetrachloride is reacted with zinc in a high-temperature vapor phase to manufacture silicon, the reaction is carried out in a non-oxidizing atmosphere and silicon is deposited as silicon crystals, melted by heating to the melting point of silicon or above in the system, and taken out as silicon crystals or melt. The apparatus for manufacturing high purity silicon has an atmospheric gas circulation mechanism, a zinc gas feed mechanism and a silicon tetrachloride feed mechanism on a downstream side of the zinc gas feed mechanism, has a gas separation mechanism, a produced silicon holding tank and a produced gas recovery mechanism through a crystal growth section, and has a temperature control mechanism at each part of the mechanisms. COPYRIGHT: (C)2007,JPO&INPIT
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