发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has good conformity with an LSI process when MEMS devices and CMOS LSIs are mixedly mounted on the same substrate, and which can suppress the effects of moisture, heat, etc. generated from LSI regions on the MEMS devices. SOLUTION: The semiconductor device comprises a semiconductor substrate (500) having a first region and a second region neighboring the first region, an integrated circuit (401) to be formed in the second region, a supporting column structure (414) which is formed on the boundary between the first region and the second region so as to have a wall shape and so as to electrically and spatially separate the first region and the second region, thin film structures (419, 427) which are supported by the supporting column structure and are laminated so as to cover the first region and the second region, and an element (424) which comprises a mechanical movable portion to be arranged in a space to be formed on the lower portion of the thin film structure existing in the first region, and which is electrically connected to the integrated circuit. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006297502(A) 申请公布日期 2006.11.02
申请号 JP20050118796 申请日期 2005.04.15
申请人 TOSHIBA CORP 发明人 FUJIWARA IKUO;HONDA HIRONAGA;SUZUKI KAZUHIRO;NARUSE YUJIRO
分类号 B81B3/00;G01J1/02;H01L21/768 主分类号 B81B3/00
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