Semiconductor device and method of manufacture thereof

摘要

A semiconductor device includes a semiconductor substrate having a first surface. First gate electrodes are formed along a first direction on the first surface. Source/drain areas are formed in the first surface and sandwich a channel region. A first interlayer insulating layer fills a region between the first gate electrodes and has the top lower than the tops of the first gate electrodes. A second interlayer insulating layer is formed above the first gate electrodes and the first interlayer insulating layer. Interconnect layers are formed in the second interlayer insulating layer along a direction which intersects the first direction and is insulated from each other. A region between the interconnect layers is filled with the second interlayer insulating layer. A contact plug is formed in the first and second interlayer insulating layers and is in contact with the interconnect layer and the source/drain area.