发明名称 Schottky device and method of forming
摘要 A Schottky device having a plurality of unit cells, each having a Schottky contact portion, surrounded by a termination structure that causes depletion regions to form in a vertical and horizontal direction, relative to a surface of the device, during a reverse bias voltage condition.
申请公布号 US2006246670(A1) 申请公布日期 2006.11.02
申请号 US20050117996 申请日期 2005.04.29
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 KHEMKA VISHNU K.;PARTHASARATHY VIJAY;ZHU RONGHUA;BOSE AMITAVA
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
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