发明名称 |
Memory device and semiconductor device |
摘要 |
An object of the present invention is to provide an involatile memory device that is capable of writing and erasing data at a time other than during manufacturing, and a semiconductor device having the memory device. Also, an object of the present invention is to provide a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. The memory device of the present invention has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair; of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
|
申请公布号 |
EP1717862(A2) |
申请公布日期 |
2006.11.02 |
申请号 |
EP20060007518 |
申请日期 |
2006.04.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHSAWA, NOBUHARU |
分类号 |
H01L27/28;G11C11/56;G11C13/00;G11C13/02 |
主分类号 |
H01L27/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|