发明名称 Memory device and semiconductor device
摘要 An object of the present invention is to provide an involatile memory device that is capable of writing and erasing data at a time other than during manufacturing, and a semiconductor device having the memory device. Also, an object of the present invention is to provide a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. The memory device of the present invention has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair; of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
申请公布号 EP1717862(A2) 申请公布日期 2006.11.02
申请号 EP20060007518 申请日期 2006.04.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OHSAWA, NOBUHARU
分类号 H01L27/28;G11C11/56;G11C13/00;G11C13/02 主分类号 H01L27/28
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