NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A non-volatile memory device is provided to greatly improve a heat transfer characteristic by forming a phase-change material of hemi-spherical type so that heat transferred from a heat generating body is transferred to an upper electrode. A heat generating body(113) is connected to a lower electrode(111). A phase-change material(114) whose lower part is connected to the heat generating body is made of a hemi-spherical type. An upper electrode(115) is formed on the phase-change material. The upper electrode surrounds the entire phase-change material along the upper surface of the phase-change material or surrounds a partial surface of the phase-change material along the upper surface.