| 摘要 |
<p>A contact mask of a semiconductor device is provided to improve process margin and to reduce fabrication cost by forming a light-transmitting region of line-type between a plurality of light-transmitting patterns. A contact mask includes a plurality of light-transmitting patterns(110) of bar type, a halftone phase shift region(120) of line type, and a light-transmitting region(130) of line type. The halftone phase shift region is formed at a center portion to major-axis direction in the light-transmitting pattern. The light-transmitting region is formed between major-axis directions of the light-transmitting pattern. The light-transmitting region of line type has a line-width of 1-50 nanometers.</p> |
