| 摘要 |
<p>An electron emission device is provided to prevent an increase of resistance of a gate electrode in a process for forming an insulating layer between the gate electrode and a focusing electrode by changing a structure of the gate electrode. A first and second substrates(10,20) are disposed opposite to each other. A plurality of cathode electrodes(11) are formed on the first substrate. A first insulating layer is formed between a plurality of gate electrodes(16) and the cathode electrodes. A plurality of electron emission parts(19) are electrically connected with the cathode electrodes. A second insulating layer is formed between a focusing electrode(18) and the gate electrodes. A phosphor layer(21) is formed on the second substrate. An anode electrode(22) is formed on one side of the phosphor layer. The gate electrode includes a first layer(13), a second layer(14), and a third layer(15).</p> |
