| 摘要 |
A method for fabricating a semiconductor device is provided to eliminate the necessity of mask and etch processes for etching a key region previously formed in a substrate more deeply by depositing and etching a nitride layer having a transparent characteristic on a lower electrode of a capacitor and by depositing a material having an opaque characteristic like TaNx or TiNx. A first region for forming a capacitor and a second region for forming a resistor are defined in a substrate(10). A first insulation layer(11) is formed on the substrate in the first and the second region by interposing a lower electrode(12) on the substrate corresponding to the first region. A dielectric layer(13) is deposited on the resultant structure including the lower electrode. The dielectric layer is etched to form a first pattern hole exposing a part of the upper part of the first insulation layer formed in the second region. While the first pattern hole is formed, a part of the upper part of the lower electrode is exposed. The first pattern hole is filled with a resistor. A second insulation layer is deposited on the resultant structure. The second insulation layer is etched to form a second pattern hole exposing a part of the upper part of the dielectric layer in the first region. The second pattern hole is filled with an upper electrode.
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