| 摘要 |
An ultraviolet detecting semiconductor device is provided to improve characteristics of a schottky junction and an ohmic junction while improving optical reactivity and reliability by forming an ultra-thin AlyGa1-yN(0<=y<=x) as a capping layer on an AlxGa1-xN(0<=x<=1) as a light absorption layer such that the capping layer has lower Al composition than that of the light absorption layer and by forming a schottky junction layer on the capping layer. A buffer layer, a light absorption layer(13), a schottky junction layer(14) and an ohmic junction layer(16) are formed on a substrate(10). The buffer layer is made of an n-type AlxGa1-xN(0<=x<=1) layer. The light absorption layer is made of an n-type AlxGa1-xN(0<=x<=1) layer. A capping layer(17) made of an AlyGa1-yN(0<=y<=x) is formed on the light absorption layer. The ohmic junction layer is formed on a partial region of the buffer layer and the capping layer. A schottky junction layer is formed on the capping layer. The substrate is selected from a group composed of sapphire, SiC, Si, GaAs and glass.
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