CHEMICAL MECHANICAL POLISHING SLURRY FOR POLISHING POLY-SILICON FILM AND METHOD FOR PRODUCING THEREOF

摘要

Provided are a CMP slurry composition for polishing polycrystalline silicon which is improved in polishing uniformity and selectivity by reducing the surface defect of a wafer, and its preparation method. The CMP slurry composition comprises a metal oxide; a quaternary ammonium base compound; and 0.001-1 wt% of a fluorine-based surfactant represented by CF3(CF2)nSO2X, wherein n is 1-20; X is COOR, RO, (OCH2CH2)n' or (OCH2CH(OH)CH2)n'; R is a C1-C20 alkyl group; and n' is 1-100. Preferably the metal oxide is at least one selected from the group consisting of SiO2, Al2O3, CeO2, ZrO2 and TiO2 and has a primary particle size of 10-200 nm and a specific surface area of 10-300 m^2/g; and the quaternary ammonium base compound is at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide.